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1N4448W_1 PDF预览

1N4448W_1

更新时间: 2024-10-30 04:24:15
品牌 Logo 应用领域
TSC 二极管开关
页数 文件大小 规格书
2页 43K
描述
Fast Switching Surface Mount Diode

1N4448W_1 数据手册

 浏览型号1N4448W_1的Datasheet PDF文件第2页 
1N4448W  
Fast Switching Surface Mount Diode  
Voltage Range  
75 Volts  
350m Watts Power Dissipation  
SOD-123  
Features  
0.022(0.55)  
Typ. Min.  
Fast switching speed  
Surface mount package ideally suited for  
0.053(1.35)  
Max.  
automatic insertion  
For general purpose switching applications  
High conductance  
0.152(3.85)  
0.140(3.55)  
0.112(2.85)  
0.100(2.55)  
Mechanical Data  
0.010(0.25)  
Min.  
Case: SOD-123, Molded plastic  
Terminals: Solderable per MIIL-STD-202,  
Method 208  
0.067(1.70)  
0.55(1.40)  
0.006(0.15)  
Typ. Min.  
Polarity: Cathode Band  
Marking: Date Code and Type Code or Date  
Code only  
0.004(0.10)  
Max.  
Type Code: T5  
Weight: 0.01 gram (approx.)  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
VRM  
VRRM  
VRWM  
VR  
Value  
100  
Units  
V
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
75  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
53  
500  
250  
V
mA  
mA  
Forward Continuous Current (Note 1)  
Average Rectifier Output Current (Note 1)  
Non-Repetitive Peak Forward Surge Current  
@ t=1.0uS  
Io  
IFSM  
4.0  
2.0  
A
@ t=1.0S  
Power Dissipation (Note 1)  
Thermal Resistance Junction to Ambient Air  
(Note 1)  
Pd  
350  
mW  
K/W  
OC  
RθJA  
TJ, TSTG  
357  
Operating and Storage Temperature Range  
-65 to + 150  
Electrical Characteristics  
Type Number  
Symbol  
Min  
0.62  
Max  
0.72  
0.855  
1.0  
Units  
Forward Voltage  
IF=5.0mA  
IF= 10mA  
IF =100mA  
IF=150mA  
VF  
V
1.25  
Peak Reverse Current VR=75V  
2.5  
50  
30  
25  
VR=75V, Tj=150℃  
VR=25V, TJ=150℃  
VR=20V  
uA  
nA  
_
IR  
_
_
Junction Capacitance VR=0, f=1.0MHz  
Reverse Recovery Time (Note 2)  
Cj  
trr  
4.0  
4.0  
pF  
nS  
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.  
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.  
- 830 -  

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Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-2