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1N4448WS PDF预览

1N4448WS

更新时间: 2024-11-23 22:15:35
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
3页 70K
描述
SURFACE MOUNT FAST SWITCHING DIODE

1N4448WS 数据手册

 浏览型号1N4448WS的Datasheet PDF文件第2页浏览型号1N4448WS的Datasheet PDF文件第3页 
1N4448WS  
SURFACE MOUNT FAST SWITCHING DIODE  
Features  
·
·
·
·
Fast Switching Speed  
SOD-323  
Ultra-Small Surface Mount Package  
For General Purpose Switching Applications  
High Conductance  
Dim  
A
Min  
2.30  
1.60  
1.20  
Max  
2.70  
1.80  
1.40  
B
D
H
J
Mechanical Data  
C
G
D
1.05 Typical  
·
Case: SOD-323, Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020A  
Polarity: Cathode Band  
Leads: Solderable per MIL-STD-202,  
Method 208  
a
A
B
E
0.25  
0.20  
0.10  
0.35  
0.40  
0.15  
·
G
H
·
·
·
C
E
J
0.05 Typical  
0° 8°  
a
All Dimensions in mm  
·
·
Marking: T5  
Weight: 0.004 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
1N4448WS  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
75  
VR(RMS)  
IFM  
RMS Reverse Voltage  
53  
V
Forward Continuous Current  
Average Rectified Output Current  
500  
250  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
4.0  
2.0  
IFSM  
A
@ t = 1.0s  
Pd  
Power Dissipation (Note 2)  
200  
625  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
¾
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 1)  
IR = 2.5mA  
75  
V
IF = 5.0mA  
IF = 10mA  
IF = 100mA  
IF = 150mA  
0.72  
0.855  
1.0  
0.62  
¾
¾
VFM  
Forward Voltage (Note 1)  
V
¾
1.25  
VR = 75V  
2.5  
50  
30  
25  
mA  
mA  
mA  
nA  
V
V
V
R = 75V, Tj = 150°C  
R = 25V, Tj = 150°C  
R = 20V  
IRM  
Peak Reverse Current (Note 1)  
¾
VR = 0, f = 1.0MHz  
CT  
trr  
Total Capacitance  
¾
¾
4.0  
4.0  
pF  
ns  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
Notes:  
1. Short duration test pulse used to minimize self-heating.  
2. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website  
at http://www/diodes.com/datasheets/ap02001.pdf.  
DS30096 Rev. 4 - 2  
1 of 3  
1N4448WS  

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