1N4448WS
Vishay Semiconductors
www.vishay.com
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
DESIGN SUPPORT TOOLS click logo to get started
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
1N4448WS-E3-08 or 1N4448WS-E3-18
1N4448WS-HE3-08 or 1N4448WS-HE3-18
1N4448WS
Single
A3
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
75
UNIT
Reverse voltage
VR
V
V
Repetitive peak reverse voltage
VRRM
100
Average rectified current half wave rectification
with resistive load (1)
f ≥ 50 Hz
IF(AV)
150
mA
Surge forward current
Power dissipation (1)
t < 1 s and Tj = 25 °C
IFSM
Ptot
350
200
mA
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
650
UNIT
K/W
°C
Junction temperature
150
Storage temperature range
Operating temperature range
Tstg
-65 to +150
-55 to +150
°C
Top
°C
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.5, 07-Jul-17
Document Number: 81387
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000