Datasheet > 1N4448WS-G3-18

1N4448WS-G3-18

更新时间： 2024-11-02 01:11:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	90K
描述
Small Signal Fast Switching Diode

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1N4448WS-G3-18 数据手册

1N4448WS-G

Vishay Semiconductors

www.vishay.com

Small Signal Fast Switching Diode

FEATURES

• Silicon epitaxial planar diode

• Fast switching diodes

• AEC-Q101 qualified available 

(part number on request)

• Base P/N-G3 - green, commercial grade

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912



MECHANICAL DATA

Case: SOD-323

Weight: approx. 4 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

PART

ORDERING CODE

INTERNAL CONSTRUCTION

TYPE MARKING

REMARKS

1N4448WS-G

1N4448WS-G3-08 or 1N4448WS-G3-18

Single diode

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

Repetitive peak reverse voltage

V_RRM

100

Average rectified current half wave rectification

with resistive load ⁽¹⁾

f  50 Hz

I_F(AV)

150

Surge forward current

Power dissipation ⁽¹⁾

t < 1 s and T_j= 25 °C

I_FSM

P_tot

350

200

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Thermal resistance junction to ambient air ⁽¹⁾

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

650

UNIT

K/W

°C

Junction temperature

150

Storage temperature range

Operating temperature range

T_stg

-65 to +150

-55 to +150

°C

T_op

°C

Note

(1)

Valid provided that electrodes are kept at ambient temperature.

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

I_F= 100 mA

V_F

I_R

Forward voltage

I_F= 5 mA

0.620

0.720

_R= 20 V

_R= 75 V

μA

Leakage curent

I_R

_R= 20 V, T_j= 150 °C

I_R

Diode capacitance

V_F= V_R= 0 V

C_D

I_F= 10 mA, i_R= 1 mA, V_R= 6 V,

Reverse recovery time

t_rr

R_L= 100 

Rev. 1.2, 14-Oct-16

Document Number: 85414

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与1N4448WS-G3-18相关器件

型号	品牌	获取价格	描述	数据表
1N4448WS-HE3-08	VISHAY	获取价格	Small Signal Fast Switching Diode
1N4448WS-HE3-18	VISHAY	获取价格	Small Signal Fast Switching Diode
1N4448WSQ	YANGJIE	获取价格	SOD-323
1N4448WSQ-7-F	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
1N4448WSRR	TSC	获取价格	200mW High Speed SMD Switching Diode
1N4448WS-RR	TSC	获取价格	200mW High Speed SMD Switching Diode
1N4448WSRRG	TSC	获取价格	200mW High Speed SMD Switching Diode
1N4448WS-RRG	TSC	获取价格	200mW High Speed SMD Switching Diode
1N4448WS-T1	SENSITRON	获取价格	Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-3
1N4448WS-T1	TSC	获取价格	SURFACE MOUNT FAST SWITCHING DIODE