5秒后页面跳转
1N4448WT PDF预览

1N4448WT

更新时间: 2024-10-15 18:05:03
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
6页 173K
描述
Reverse Voltage Vr : 75 V;Forward Current Io : 150 mA;Max Surge Current : 2.0 A;Forward Voltage Vf : 1.0 V;Reverse Current Ir : 5 uA;Recovery Time : 4 ns;Package / Case : SOD-523F;Mounting Style : SMT/SMD

1N4448WT 数据手册

 浏览型号1N4448WT的Datasheet PDF文件第2页浏览型号1N4448WT的Datasheet PDF文件第3页浏览型号1N4448WT的Datasheet PDF文件第4页浏览型号1N4448WT的Datasheet PDF文件第5页浏览型号1N4448WT的Datasheet PDF文件第6页 
1N4148WT  
1N4448WT  
1N914BWT  
200mW SOD-523 SURFACE MOUNT  
Very Small Outline Flat Lead Plastic Package  
General Purpose Application  
Fast Switching Diode  
Green Product  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
200  
-55 to +150  
+150  
100  
mW  
°C  
°C  
V
Storage Temperature Range  
Operating Junction Temperature  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Continuous Forward Current  
VRSM  
VRRM  
IFRM  
IO  
SOD-523 Flat Lead  
75  
V
300  
mA  
mA  
150  
Non-repetitive Peak Forward Surge Current  
Cathode  
Anode  
IFSM  
2
A
(Pulse Width=1us)  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
ELECTRICAL SYMBOL  
Specification Features:  
Fast Switching Device (TRR <4.0 nS)  
General Purpose Diodes  
Extremely Small SOD-523 Package  
Flat Lead SOD-523 Small Outline Plastic Package  
Surface Device Type Mounting  
RoHS Compliant  
Green EMC  
DEVICE MARKING CODE:  
Device Type  
Device Marking  
1N4148WT  
1N4448WT  
1N914BWT  
T4  
T5  
T6  
Matte Tin(Sn) Lead Finish  
Band Indicates Cathode  
P/N suffix V means AEC-Q101qualified, eg:1N4148WTV  
P/N suffix V means Halogen-free  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Symbol  
Parameter  
Test Condition  
Unit  
Min  
100  
75  
Max  
BV  
IR  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
IR=100μA  
IR=5μA  
Volts  
VR=20V  
25  
5
nA  
μA  
VR=75V  
VF  
1N4448WT, 1N914BWT  
TC1N4448W1TN,4148WT  
1N4448WT, 1N914BWT  
IF=5mA  
0.62  
0.72  
1.0  
1.0  
IF=10mA  
IF=100mA  
IF=10mA  
IR=60mA  
RL=100Ω  
IRR=1mA  
VR=0V, f=1MHZ  
Volts  
TRR  
Reverse Recovery Time  
Capacitance  
4
4
nS  
pF  
C
2018-02/08  
REV:A  

与1N4448WT相关器件

型号 品牌 获取价格 描述 数据表
1N4448W-T MCC

获取价格

Rectifier Diode,
1N4448W-T RECTRON

获取价格

Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-2
1N4448W-T1 WTE

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
1N4448W-T1-LF WTE

获取价格

Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
1N4448W-T3 WTE

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
1N4448WT5 HDSEMI

获取价格

SOD-123 Plastic-Encapsulate Diodes
1N4448WTF(LS) DIODES

获取价格

SwitchingDiodes
1N4448W-TP MCC

获取价格

暂无描述
1N4448W-TP-HF MCC

获取价格

Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT,
1N4448WTV RECTRON

获取价格

Reverse Voltage Vr : 75 V;Forward Current Io : 150 mA;Max Surge Current : 2.0 A;Forward Vo