1N4448W-T

更新时间： 2024-11-14 13:03:31

品牌	Logo	应用领域
美微科 - MCC		二极管开关
页数	文件大小	规格书
4页	410K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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1N4448W-T 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.32	Is Samacsys：	N
JESD-609代码：	e0	湿度敏感等级：	1
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

1N4448W-T 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

1N4448

Features

•

Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates

Compliant. See ordering information)

Low Current Leakage

Metalurgically Bonded Construction

Low Cost

500mW 100Volt

Switching Diode

•

Marking : Cathode band and type number

Moisture Sensitivity Level 1

Maximum Ratings

DO-35

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 35°C/W Junction To Ambient

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

Peak Reverse

Voltage

Average Rectified

Current

V_R

V_RM

75V

100V

I_O

150mA Resistive Load

f >= 50Hz

Cathode

Mark

Power Dissipation

Junction

Temperature

Peak Forward Surge

Current

P_TOT

T_J

500mW

150°C

I_FSM

500mA t<1s

Instantaneous

Forward Voltage

V_F

1.0V(MAX) I_FM= 100mA;

0.62-0.72V I_FM= 5.0mA

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

V_R=20Volts

T_J= 25°C

T_J= 150°C

VR=75Volts

Measured at

1.0MHz, V_R=4.0V

I_F=10mA

I_R

25nA

50mA

5uA

DIMENSIONS

INCHES

MIN

---

MIN

C_J

T_rr

4pF

DIM

MAX

.166

.079

.020

---

MAX

4.2

NOTE

---

2.00

.52

---

Reverse Recovery

Time

4nS

---

V_R= 6V

1.000

25.40

R_L=100W

*Pulse test: Pulse width 300 msec, Duty cycle 2%

Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.

www.mccsemi.com

Revision: A

2011/01/01

1 of 4

12 3 4

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