Datasheet > 1N4448WX_13

1N4448WX_13

更新时间： 2024-09-26 12:24:51

品牌	Logo	应用领域
美微科 - MCC		二极管开关
页数	文件大小	规格书
3页	206K
描述
High Speed Switching Diode 200mW

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中文翻译

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1N4448WX_13 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

1N4448WX

Micro Commercial Components

Features

ꢀ Lead Free Finish/RoHS Compliant ("P" Suffix

designates RoHS Compliant. See ordering information)

Fast Switching Speed

Ultra Small Surface Mount Package

For General Purpose Switching Applications

High Conductance

High Speed

Switching Diode

200mW

ꢀ

Halogen free available upon request by adding suffix "-HF"

Mechanical Data

ꢀ Case: SOD-323, Molded Plastic

SOD-323

ꢀ Polarity: Indicated by Cathode Band

ꢀ

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Marking : T5

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Symbol

VRM

Value

100

Unit

Non-Repetitive Peak Reverse Volt.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

V_R(RMS)

I_FM

RMS Reverse Voltage

Forward Continuous Current(Note1)

Average Rectified Output Current

500

250

DIMENSIONS

DIM

INCHES

NOTE

MIN

MAX

.107

.071

.053

.045

.016

.018

.010

.006

MIN

2.30

1.60

1.15

0.80

0.25

0.10

-----

MAX

2.70

1.80

1.35

1.15

0.40

0.45

0.25

0.15

Non-Repetitive Peak @ t=1.0us

Forward Surge Current @ t=1.0s

IFSM

.090

.063

.045

.031

.010

.004

-----

Power Dissipation(Note 1)

Thermal Resistance(Note 1)

Operation/Storage Temp. Range

200

625

K/W

^oC

R_șJA

Tj, T^STG

-65 to +150

Electrical Characteristics @ 25^oC Unless Otherwise Specified

Charateristic

Symbol Max Unit

0.720

Test Cond.

I_F=5.0mA

SUGGESTED SOLDER

PAD LAYOUT

Maximum Forward

Voltage Drop

V^FM

0.855

IF=10mA

0.074"

I^F=100mA

I^F=150mA

1.25

VR=75V

2.5

0.027”

Maximum Peak

Reverse Current

I^RM

uA VR=75V Tj=150^oC

uA V^R=25V Tj=150^oC

nA V^R=20V

0.022”

Junction Capacitance

t^rr

pF V^R=0V, f=1.0MHz

I^F=IR=10mA, Irr=0.1IR,

R_L=100 OHM

Reverse Recovery Time

Notes: 1. Valid provided that terminals are kept at ambient temperature

www.mccsemi.com

Revision: B

2013/01/01

1 of 3

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