5秒后页面跳转
1N4449 PDF预览

1N4449

更新时间: 2024-11-15 14:53:39
品牌 Logo 应用领域
先科 - SWST 开关小信号开关二极管
页数 文件大小 规格书
1页 61K
描述
小信号开关二极管

1N4449 数据手册

  
1N4149...1N4454  
Silicon Epitaxial Planar Switching Diode  
for general purpose and switching  
Max. 0.5  
Max. 0.45  
Min. 27.5  
Max. 3.9  
Min. 27.5  
Min. 27.5  
Max. 2.9  
Min. 27.5  
Max. 1.9  
Max. 1.9  
Black  
Cathode Band  
Black  
Part No.  
Black  
"ST" Brand  
Black  
Cathode Band  
Black  
Part No.  
XXX  
ST  
XXX  
Glass Case DO-34  
Dimensions in mm  
Glass Case DO-35  
Dimensions in mm  
O
Absolute Maximum Ratings and Characteristics (Ta = 25 C unless otherwise specified.)  
Max.  
Peak  
Reverse  
Voltage  
Max. Power  
Max.  
Average  
Rectified  
Current  
Max. Forward  
Voltage  
Max. Reverse  
Current  
Dissipation Junction  
Max. Reverse Recovery Time  
Type  
at 25OC  
Temp.  
Tj (OC)  
VRM (V)  
100  
IF(AV) (mA) Ptot (mW) 2)  
VF (V) at IF (mA) IR (nA) at VR (V) trr (ns)  
Conditions  
IF = 10 mA, VR = 6 V,  
RL = 100 , to IR = 1 mA  
1N4149 1)  
1N4151  
150  
150  
150  
150  
150  
150  
500  
500  
400  
500  
500  
500  
200  
200  
175  
200  
200  
200  
1
1
10  
50  
0.1  
30  
20  
30  
25  
50  
20  
50  
30  
25  
20  
20  
4
2
2
2
4
4
IF = 10 mA, VR = 6 V,  
RL = 100 , to IR = 1 mA  
75  
40  
IF = 10 mA, VR = 6 V,  
RL = 100 , to IR = 1 mA  
1N4152  
0.55  
1
50  
IF = 10 mA, VR = 6V,  
RL = 100 , to IR = 1 mA  
1N4154  
35  
100  
25  
IF = 10 mA, VR = 6 V,  
RL = 100 , to IR = 1 mA  
1N4447 1)  
1N4449 1)  
100  
100  
1
IF = 10 mA, VR = 6 V,  
RL = 100 , to IR = 1 mA  
1
25  
1N4450  
1N4451  
1N4453  
1N4454  
40  
40  
30  
75  
150  
150  
150  
150  
400  
400  
400  
400  
175  
175  
175  
175  
0.54  
0.5  
0.55  
1
0.5  
0.1  
50  
50  
30  
30  
20  
50  
4
10  
-
IF = IR = 10 mA , to IR = 1 mA  
IF = IR = 10 mA , to IR = 1 mA  
-
0.01  
50  
10  
100  
4
IF = IR = 10 mA , to IR = 1 mA  
1) These diodes are also available in glass case DO-34. Parameter for diodes in case DO-34: Ptot = 300 mW, Tj = 175 OC  
2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.  
®
Dated : 15/06/2009  

与1N4449相关器件

型号 品牌 获取价格 描述 数据表
1N4449-1E3 MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC
1N4449BK CENTRAL

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
1N4449BKLEADFREE CENTRAL

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
1N4449FV ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon
1N4449HA ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon
1N4449HC ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon
1N4449HE ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon
1N4449HF ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon
1N4449HG ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon
1N4449HJ ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon