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1N4448W-V-GS18 PDF预览

1N4448W-V-GS18

更新时间: 2024-09-26 06:17:35
品牌 Logo 应用领域
威世 - VISHAY 信号二极管开关光电二极管
页数 文件大小 规格书
6页 134K
描述
Small Signal Fast Switching Diode

1N4448W-V-GS18 技术参数

是否无铅: 不含铅生命周期:Obsolete
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.34
Is Samacsys:NBase Number Matches:1

1N4448W-V-GS18 数据手册

 浏览型号1N4448W-V-GS18的Datasheet PDF文件第2页浏览型号1N4448W-V-GS18的Datasheet PDF文件第3页浏览型号1N4448W-V-GS18的Datasheet PDF文件第4页浏览型号1N4448W-V-GS18的Datasheet PDF文件第5页浏览型号1N4448W-V-GS18的Datasheet PDF文件第6页 
1N4448W-V  
Vishay Semiconductors  
Small Signal Fast Switching Diode  
Features  
• Silicon Epitaxial Planar Diode  
• Fast switching diode  
e3  
• This diode is also available in other  
case styles including the DO-35 case with the type  
designation 1N4448, the MiniMELF case with the  
type designation LL4448, and the SOT-23 case  
with the type designation IMBD4448  
17431  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOD-123 Plastic case  
Weight: approx. 9.3 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Type Marking  
Remarks  
Tape and Reel  
1N4448W-V  
1N4448W-V-GS18 or 1N4448W-V-GS08  
A3  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Reverse voltage  
Test condition  
Symbol  
VR  
Value  
75  
Unit  
V
Peak reverse voltage  
VRM  
100  
V
1501)  
Average rectified current half  
wave rectification with resistive  
load  
f 50 Hz  
IF(AV)  
mA  
Surge current  
t < 1 s and Tj = 25 °C  
IFSM  
Ptot  
500  
mA  
5001)  
Power dissipation  
mW  
1) Valid provided that electrodes are kept at ambient temperature.  
Document Number 85722  
Rev. 1.3, 12-Dec-05  
www.vishay.com  
1

1N4448W-V-GS18 替代型号

型号 品牌 替代类型 描述 数据表
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Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2