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1N4448WS-G3-08 PDF预览

1N4448WS-G3-08

更新时间: 2022-02-26 11:53:25
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 90K
描述
Small Signal Fast Switching Diode

1N4448WS-G3-08 数据手册

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1N4448WS-G  
Vishay Semiconductors  
www.vishay.com  
Small Signal Fast Switching Diode  
FEATURES  
• Silicon epitaxial planar diode  
• Fast switching diodes  
• AEC-Q101 qualified available  
(part number on request)  
• Base P/N-G3 - green, commercial grade  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-323  
Weight: approx. 4 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
INTERNAL CONSTRUCTION  
TYPE MARKING  
REMARKS  
1N4448WS-G  
1N4448WS-G3-08 or 1N4448WS-G3-18  
Single diode  
AJ  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
75  
UNIT  
Reverse voltage  
VR  
V
V
Repetitive peak reverse voltage  
VRRM  
100  
Average rectified current half wave rectification  
with resistive load (1)  
f 50 Hz  
IF(AV)  
150  
mA  
Surge forward current  
Power dissipation (1)  
t < 1 s and Tj = 25 °C  
IFSM  
Ptot  
350  
200  
mA  
mW  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
650  
UNIT  
K/W  
°C  
Junction temperature  
150  
Storage temperature range  
Operating temperature range  
Tstg  
-65 to +150  
-55 to +150  
°C  
Top  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature.  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
MIN.  
TYP.  
MAX.  
1
UNIT  
V
IF = 100 mA  
VF  
VF  
IR  
Forward voltage  
IF = 5 mA  
0.620  
0.720  
25  
V
V
V
R = 20 V  
R = 75 V  
nA  
μA  
μA  
pF  
Leakage curent  
IR  
5
V
R = 20 V, Tj = 150 °C  
IR  
50  
Diode capacitance  
VF = VR = 0 V  
CD  
4
IF = 10 mA, iR = 1 mA, VR = 6 V,  
Reverse recovery time  
trr  
4
ns  
RL = 100   
Rev. 1.2, 14-Oct-16  
Document Number: 85414  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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