Datasheet > 1N4448WS_10

1N4448WS_10

更新时间： 2024-11-01 12:20:07

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
4页	93K
描述
SURFACE MOUNT FAST SWITCHING DIODE

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中文翻译

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1N4448WS_10 数据手册

1N4448WS

SURFACE MOUNT FAST SWITCHING DIODE

Features

Mechanical Data

•

Fast Switching Speed

Small Surface Mount Package

For General Purpose Switching Applications

High Conductance

Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)

"Green" Device (Note 4)

•

Case: SOD-323

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Leads: Matte Tin Finish annealed over Alloy 42 leadframe (Lead

Free Plating). Solderable per MIL-STD-202, Method 208

•

Polarity: Cathode Band

Qualified to AEC-Q101 Standards for High Reliability

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.004 grams (approximate)

SOD-323

Top View

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

Symbol

V_RM

Value

100

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

500

250

I_O

0.5

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Symbol

Value

200

Unit

Power Dissipation (Note 2)

P_D

Thermal Resistance Junction to Ambient Air (Note 2)

Operating and Storage Temperature Range

625

°C/W

°C

R_θ

-65 to +150

T_J, T_STG

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 1)

V_(BR)R

⎯

I_R= 2.5μA

I_F= 5.0mA

I_F= 10mA

I_F= 100mA

I_F= 150mA

0.62

⎯

0.72

0.855

1.0

Forward Voltage

V_FM

1.25

⎯

_R= 75V

_R= 75V, T_J= 150°C

μA

2.5

Peak Reverse Current (Note 1)

I_RM

⎯

V_R= 25V, T_J= 150°C

_R= 20V

Total Capacitance

4.0

C_T

t_rr

⎯

V_R= 0, f = 1.0MHz

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

Notes:

1. Short duration pulse test used to minimize self-heating.

2. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website at

http://www/diodes.com/datasheets/ap02001.pdf.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

1 of 4

www.diodes.com

February 2010

1N4448WS

Document number: DS30096 Rev. 11 - 2

12 3 4

中文翻译

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与1N4448WS_10相关器件

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1N4448WS_15	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
1N4448WS_17	VISHAY	获取价格	Small Signal Fast Switching Diode
1N4448WS-13	DIODES	获取价格	Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-2
1N4448WS-7	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
1N4448WS-7-F	TSC	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
1N4448WS-7-F	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
1N4448WS-AH	SWST	获取价格	小信号开关二极管
1N4448WS-BL	SWST	获取价格	小信号开关二极管
1N4448WS-E3-08	VISHAY	获取价格	Small Signal Fast Switching Diode
1N4448WS-E3-18	VISHAY	获取价格	Small Signal Fast Switching Diode

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