Datasheet > 1N4448W-13

1N4448W-13

更新时间： 2024-02-11 05:43:14

品牌	Logo	应用领域
美台 - DIODES		光电二极管
页数	文件大小	规格书
3页	65K
描述
Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-2

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1N4448W-13 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	R-PDSO-G2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.70
风险等级：	5.04	Base Number Matches：	1

1N4448W-13 数据手册

SPICE MODEL: 1N4448W

1N4448W

FAST SWITCHING SURFACE MOUNT DIODE

Features

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

SOD-123

Dim

Min

3.55

2.55

1.40

—

Max

3.85

2.85

1.70

1.35

0.65

Available in Lead Free/RoHS Compliant Version (Note 3)

Mechanical Data

Case: SOD-123

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

0.45

Moisture Sensitivity: Level 1 per J-STD-020C

0.55 Typical

0.25

0.11 Typical

Terminals: Solderable per MIL-STD-202, Method 208

—

Also Available in Lead Free Plating (Matte Tin Finish annealed

over Alloy 42 leadframe). Please See Ordering Information,

Note 5, on Page 3

—

0.10

0°

8°

Polarity: Cathode Band

All Dimensions in mm

Marking: Date Code and Type Code: See Page 3

Type Code: T5

Ordering Information See Page 3

Weight: 0.01 grams (approx.)

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

1N4448W

Unit

V_RM

Non-Repetitive Peak Reverse Voltage

100

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_FM

RMS Reverse Voltage

Forward Continuous Current

Average Rectified Output Current

500

250

I_O

Non-Repetitive Peak Forward Surge Current @ t = 1.0ms

4.0

2.0

I_FSM

@ t = 1.0s

P_d

Power Dissipation (Note 2)

400

315

°C/W

°C

R_qJA

Thermal Resistance Junction to Ambient Air (Note 2)

Operating and Storage Temperature Range

T_j, T_STG

-65 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Max

Unit

Test Condition

V_(BR)R

Reverse Breakdown Voltage (Note 1)

I_R= 10mA

I_F= 5.0mA

I_F= 10mA

I_F= 100mA

I_F= 150mA

0.62

0.72

0.855

1.0

V_FM

Forward Voltage (Note 1)

1.25

V_R= 75V

2.5

_R= 75V, T_j= 150°C

_R= 25V, T_j= 150°C

_R= 20V

I_RM

Peak Reverse Current (Note 1)

V_R= 0, f = 1.0MHz

C_T

t_rr

Total Capacitance

4.0

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

Notes: 1. Short duration pulse test used to minimize self-heating effect.

2. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on our website at http://www/diodes.com/datasheets/ap02001.pdf.

3. No purposefully added lead.

DS12002 Rev. 11 - 2

1 of 3

1N4448W

www.diodes.com

ã Diodes Incorporated

12 3

中文翻译

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与1N4448W-13相关器件

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1N4448W-7	DIODES	获取价格	FAST SWITCHING SURFACE MOUNT DIODE
1N4448W-7-F	DIODES	获取价格	FAST SWITCHING SURFACE MOUNT DIODE
1N4448W-AU	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
1N4448WG	TC	获取价格	SOD-123G
1N4448W-G	VISHAY	获取价格	Silicon epitaxial planar diode
1N4448WHE3	MCC	获取价格	Tape : 3K/Reel, 120K/Ctn;
1N4448WQ	YANGJIE	获取价格	SOD-123
1N4448WQ-7-F	DIODES	获取价格	FAST SWITCHING SURFACE MOUNT DIODE
1N4448WRH	TSC	获取价格	400mW High Speed SMD Switching Diode
1N4448WRHG	TSC	获取价格	400mW High Speed SMD Switching Diode

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