Datasheet > 1N4448W-G

1N4448W-G

更新时间： 2024-11-28 01:25:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	96K
描述
Silicon epitaxial planar diode

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1N4448W-G 数据手册

1N4448W-G

Vishay Semiconductors

www.vishay.com

Small Signal Fast Switching Diode

FEATURES

• Silicon epitaxial planar diode

• Fast switching diode

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Material categorization: 

For definitions of compliance please see

www.vishay.com/doc?99912 



MECHANICAL DATA

Case: SOD-123

Weight: approx. 9.4 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

PART

ORDERING CODE

1N4448W-G3-08 or 1N4448W-G3-18

INTERNAL CONSTRUCTION

Single diode

TYPE MARKING

REMARKS

1N4448W-G

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

Repetitive peak reverse voltage

V_RRM

100

Average rectified current half wave

rectification with resistive load ⁽¹⁾

f  50 Hz

I_F(AV)

150

Surge current

Power dissipation ⁽¹⁾

t < 1 s and T_j= 25 °C

I_FSM

P_tot

500

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Thermal resistance junction to ambient air ⁽¹⁾

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

350

UNIT

K/W

°C

Junction temperature

150

Storage temperature

T_stg

- 65 to + 150

- 55 to + 150

°C

Operating temperature

T_op

°C

Note

(1)

Valid provided that electrodes are kept at ambient temperature.

Rev. 1.0, 13-May-13

Document Number: 85409

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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