Datasheet > 1N4448WS

1N4448WS

更新时间： 2024-11-24 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		二极管
页数	文件大小	规格书
3页	454K
描述
SOD-323 Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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1N4448WS 数据手册

WILLAS

1N4448WS

SOD-323 Plastic-Encapsulate Diodes

FAST SWITCHING DIODE

FEATURES

Fast Switching Speed

SOD-323

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Moisture Sensitivity Level 1

Polarity: Color band denotes cathode end

MARKING: T5

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

Parameter

Symbol

Limit

Unit

Non-Repetitive Peak Reverse Voltage

V_RM

100

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

500

250

I_O

Peak Forward Surge Current @t=1.0μs

@t =1.0s

4.0

I_FSM

1.5

Power Dissipation

200

℃/W

℃

Thermal Resistance Junction to

Ambient

R_θJA

T_STG

625

Storage Temperature

-55~+150

Electrical Ratings @Ta=25℃

Parameter

Symbol

V _(BR)

V_F1

Min

Typ

Max

Unit

Conditions

IR=10μA

I_F=5mA

Reverse breakdown voltage

0.72

0.855

1.0

0.62

V_F2

I_F=10mA

I_F=100mA

I_F=150mA

V_R=75V

Forward voltage

Reverse current

V_F3

V_F4

1.25

2.5

I_R1

μA

I_R2

V_R=20V

Capacitance between terminals

C_T

V_R=0V,f=1MHz

I_F=I_R=10mA

Reverse recovery time

t_rr

Irr=0.1XI_R,R_L=100Ω

2012-12

WILLAS ELECTRONIC CORP.

12 3

中文翻译

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