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1N4448WS PDF预览

1N4448WS

更新时间: 2024-11-27 07:07:59
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2页 471K
描述
Fast Switching Speed

1N4448WS 数据手册

 浏览型号1N4448WS的Datasheet PDF文件第2页 
1N4448WS  
FEATURES  
SOD-323  
z
z
z
z
Fast Switching Speed  
+
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
High Conductance  
-
MARKING: T5  
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25  
Parameter  
Symbol  
Limits  
Unit  
Non-Repetitive Peak reverse voltage  
VRM  
100  
V
Peak Repetitive Peak reverse voltage  
Working Peak  
VRRM  
VRWM  
VR  
75  
V
DC Blocking  
Voltage  
RMS Reverse Voltage  
VR(RMS)  
IFM  
53  
V
Forward Continuous Current  
Average Rectified Output Current  
500  
250  
mA  
mA  
IO  
Peak forward surge current @=1.0μs  
4.0  
IFSM  
Pd  
A
@=1.0s  
1.5  
Power Dissipation  
200  
mW  
/W  
Thermal Resistance Junction to  
Ambient  
RθJA  
TSTG  
625  
Storage temperature  
-65~+150  
Electrical Ratings @TA=25℃  
Parameter  
Symbol  
V (BR)R  
VF1  
Min.  
75  
Typ.  
Max. Unit  
Conditions  
IR=10μA  
IF=5mA  
Reverse Breakdown Voltage  
V
0.62  
0.72  
0.855  
1.0  
V
V
VF2  
IF=10mA  
IF=100mA  
IF=150mA  
VR=75V  
Forward voltage  
Reverse current  
VF3  
V
VF4  
1.25  
2.5  
V
IR1  
μA  
nA  
pF  
IR2  
25  
VR=20V  
Capacitance between terminals  
CT  
4
VR=0V,f=1MHz  
IF=IR=10mA  
Reverse Recovery Time  
trr  
4
ns  
Irr=0.1XIR,RL=100Ω  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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