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1N4448W-7 PDF预览

1N4448W-7

更新时间: 2024-02-29 17:20:27
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
3页 77K
描述
FAST SWITCHING SURFACE MOUNT DIODE

1N4448W-7 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:GREEN, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:19 weeks风险等级:0.74
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:264101Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Small Outline Diode
Samacsys Footprint Name:1N4448W-7-FSamacsys Released Date:2016-04-29 11:58:28
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.72 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:2 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.4 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

1N4448W-7 数据手册

 浏览型号1N4448W-7的Datasheet PDF文件第2页浏览型号1N4448W-7的Datasheet PDF文件第3页 
1N4448W  
FAST SWITCHING SURFACE MOUNT DIODE  
Features  
·
·
Fast Switching Speed  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
SOD-123  
Dim  
A
Min  
3.55  
2.55  
1.40  
Max  
3.85  
2.85  
1.70  
1.35  
·
·
For General Purpose Switching Applications  
High Conductance  
B
H
D
J
Mechanical Data  
C
G
·
·
Case: SOD-123, Molded Plastic  
D
a
Plastic Material: UL Flammability Rating  
Classification 94V-0  
E
0.55 Typical  
0.25  
0.11 Typical  
A
B
G
H
·
·
Moisture Sensitivity: Level 1 perJ-STD-020A  
E
C
Terminals: Solderable per MIL-STD-202,  
Method 208  
J
0.10  
a
0°  
8°  
·
·
·
·
·
Polarity: Cathode Band  
All Dimensions in mm  
Marking: Date Code and Type Code: See Page 3  
Type Code: T5  
Weight: 0.01 grams (approx.)  
Ordering Information See Page 3  
@ T = 25°C unless otherwise specified  
A
Maximum Ratings  
Characteristic  
Symbol  
1N4448W  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
75  
VR(RMS)  
IFM  
RMS Reverse Voltage  
53  
V
Forward Continuous Current  
Average Rectified Output Current  
500  
250  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
@ t = 1.0s  
4.0  
2.0  
IFSM  
A
Pd  
Power Dissipation (Note 2)  
400  
315  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
Electrical Characteristics @ T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 1)  
75  
¾
V
IR = 10mA  
IF = 5.0mA  
IF = 10mA  
IF = 100mA  
IF = 150mA  
0.62  
¾
¾
0.72  
0.855  
1.0  
VFM  
Forward Voltage (Note 1)  
V
¾
1.25  
VR = 75V  
VR = 75V, Tj = 150°C  
VR = 25V, Tj = 150°C  
VR = 20V  
2.5  
50  
30  
25  
mA  
mA  
mA  
nA  
IRM  
Peak Reverse Current (Note 1)  
¾
VR = 0, f = 1.0MHz  
CT  
trr  
Total Capacitance  
¾
¾
4.0  
4.0  
pF  
ns  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
Notes:  
1. Short duration pulse test used to minimize self-heating effect.  
2. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on ourwebsite  
at http://www/diodes.com/datasheets/ap02001.pdf.  
DS12002 Rev. 9 - 2  
1 of 3  
1N4448W  

1N4448W-7 替代型号

型号 品牌 替代类型 描述 数据表
1N4448W-7-F DIODES

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