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1N4448W_10 PDF预览

1N4448W_10

更新时间: 2024-11-24 07:21:15
品牌 Logo 应用领域
强茂 - PANJIT 二极管开关
页数 文件大小 规格书
3页 96K
描述
SURFACE MOUNT SWITCHING DIODES

1N4448W_10 数据手册

 浏览型号1N4448W_10的Datasheet PDF文件第2页浏览型号1N4448W_10的Datasheet PDF文件第3页 
1N4448W  
SURFACE MOUNT SWITCHING DIODES  
POWER  
500mWatts  
100 Volts  
VOLTAGE  
FEATURES  
• Fast switching Speed  
• Electrically ldentical to Standerd JEDEC  
• High Conductance  
• Surface Mount Package ldeally Suited for Automatic lnsertion  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: SOD-123 plastic case.  
Terminals : Solderable per MIL-STD-750,Method 2026  
• Standard packaging: 8mm tape  
• Weight: approximately 0.0104g  
• Marking Code: A3  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
VR  
1N4448W  
75  
UNITS  
Reverse Voltage  
Peak Reverse Voltage  
RMS Voltage  
V
V
VRM  
100  
VRMS  
IFM  
50  
V
Forward Continuous  
500  
mA  
Maximum DC Blocking Voltage  
VDC  
75  
V
Maximum Average Forward Current at TA=25OC  
IF(AV)  
150  
mA  
Peak Forward Surge Current, 1.0us  
IFSM  
4
A
Power Dissipation Derate Above 25OC  
Maximum Forward Voltage  
PTOT  
VF  
500  
mW  
V
0.72 / 0.005A  
1.0 / 0.1A  
Maximum DC Reverse Current at Rated DC Blocking Voltage TJ=25OC  
IR  
2.5@75V  
μA  
Junction Capacitance( Note1)  
Maximum Reverse Recovery (Note2)  
Typical Thermal Resistance  
CJ  
trr  
4.0  
4.0  
450  
pF  
ns  
RθJA  
OC / W  
Operating and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
OC  
NOTE:  
1. CJ at VR=0, f=1MHZ  
2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω  
REV.0.1-FEB.5.2009  
STAD-MAR.29.2010  
PAGE . 1  

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