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1N4448WS PDF预览

1N4448WS

更新时间: 2024-11-01 12:52:59
品牌 Logo 应用领域
星合电子 - GXELECTRONICS 信号二极管
页数 文件大小 规格书
2页 544K
描述
Small Signal Diode

1N4448WS 数据手册

 浏览型号1N4448WS的Datasheet PDF文件第2页 
1N4148WS, 1N4448WS, 1N914BWS  
星合 子  
XINGHE ELECTRONICS  
Small Signal Diode / DATA SHEET (Preliminary)  
General purpose diodes  
Fast switching devices  
SOD323F Thin SMD package (Fig-1)  
RoHS compliant / Green EMC  
Matte Tin (Sn) Lead finish  
S1  
Moisture Level Sensitivity 1  
Cathode Band / Device marking  
Device Marking Code  
1N4148WS  
1N4448WS  
1N914BWS  
S1  
S2  
S3  
0.65mm Typ  
Fig.-1 Package. height  
Absolute Maximum Ratings Ta = 25 ℃)  
Symbol  
VRSM  
VRRM  
IFRM  
IFSM  
Parameter  
Value  
Units  
V
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Non-Repetitive Peak Forward Current *1  
Continuous Forward Current  
Power Dissipation  
100  
75  
V
300  
mA  
A
2
150  
IO  
mA  
mW  
PD  
200  
TJ  
Junction Temperature  
150  
TSTG  
Storage Temperature  
-55 to +150  
*1 Pulse width = 1μs  
Electrical Characteristics Ta = 25 ℃)  
Symbol  
BVR  
Parameter  
Conditions  
IR = 100μA  
Min  
100  
75  
Max  
Units  
Breakdown Voltage  
V
V
IR = 5μA  
IR  
Reverse Current  
Forward Voltage  
25  
5
nA  
VR = 20V  
μA  
VR = 75V  
IF = 5mA *2  
VF  
0.62  
0.72  
1
V
V
V
IF = 10mA  
1
IF = 100mA *2  
VR = 0V, f = 1MHz  
IF = 10mA, VR = 6V  
IRR = 1mA, RL = 100Ω  
C
Capacitance  
4
4
pF  
ns  
TRR  
Reverse Recovery Time  
1
GAOMI XINGHE ELECTRONICSCO.,LTD.  
WWW.SDDZG.COM  
TEL:0536-2210359  
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