Datasheet > 1N4448

1N4448

更新时间： 2024-11-13 22:37:35

品牌	Logo	应用领域
商朗 - LUNSURE		小信号开关二极管
页数	文件大小	规格书
3页	193K
描述
SMALL SIGNAL SWITCHING DIODE

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1N4448 数据手册

1N4448

SMALL SIGNAL SWITCHING DIODE

CHENYI ELECTRONICS

FEATURES

. Silicon epitaxial planar diode

. Fast swithching diodes

. 500mW power dissipation

. The diode is also available in the Mini-MELF case with the type

designation LL4448

MECHANICAL DATA

. Case: MinMelf glass case(SOD- 80)

. Weight: Approx. 0.05gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Ratings at 25 ambient temperature unless otherwise specified)

Symbol

Value

Units

Volts

Reverse voltage

Peak reverse voltage

VRM

100

Average rectified current, Half wave rectification with

Resistive load at TA=25 and F 50Hz

Surge forward current at t<1S and TJ=25

Power dissipation at TA=25

IAV

1501)

IFSM

Ptot

500

5001)

Junction temperature

175

Storage temperature range

STG

-65 to + 175

1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)

ELECTRICAL CHARACTERISTICS

(Ratings at 25 ambient temperature unless otherwise specified)

Symbols

Min.

Typ.

Max.

0.72

Units

Forward voltage at IF=5mA

at IF=10mA

0.62

Leakage current at VR=20V

at VR=75V

at VR=20V, TJ=150

Junction capacitance at VR=VF=0V

Reverse breakdown voltage tested with 100 A puse

Reverse recovery time from IF=10mA to IR=1mA,

VR=6V, RL=100

V(BR)R

100

trr

Thermal resistance junction to ambient

Rectification efficience at f=100MHz,VRF=2V

3501)

0.45

1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)

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与1N4448相关器件

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1N4448.T26R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
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1N4448.TR	FAIRCHILD	获取价格	DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
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