Datasheet > 1N4448_R2_10001

1N4448_R2_10001

更新时间： 2024-10-31 01:13:27

品牌	Logo	应用领域
强茂 - PANJIT		开关
页数	文件大小	规格书
4页	130K
描述
FAST SWITCHING SURFACE MOUNT DIODES

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中文翻译

获取价格

数据手册

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1N4448_R2_10001 数据手册

1N4448

FAST SWITCHING SURFACE MOUNT DIODES

POWER

500 mW

VOLTAGE

100 Volt

FEATURES

• Fast switching Speed.

• Surface Mount Package Ideally Suited For Automatic Insertion.

• Silicon Epitaxal Planar Construction.

• Lead free in compliance with EU RoHS 2011/65/EU directive

MECHANICAL DATA

• Case : Molded Glass DO-35

• Terminals : Solderable per MIL-STD-750, Method 2026

• Approx. Weight : 0.13 grams

• Ordering information : Suffix : “ -35 ” to order DO-35 Package

• Packing information

- 2K per Bulk box

T/R - 10K per 15" plastic Reel

T/B - 5K per horiz. tape & Ammo box

Cathode

Anode

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)

PARAMETER

Peak Reverse Voltage

SYMBOL

VRM

VALUE

100

UNITS

Maximum DC Blocking Voltage

VDC

Maximum Average Forward Current at TA=25^OC And f > 50Hz

Surge Forward Current at t < 1s and TJ=25^OC

Power Dissipation at TA= 25^OC

IAV

150

500

IFSM

PTOT

Maximum Forward Voltage at IF=100mA

Maximum Leakage Current

at V^R=20V

at V^R=20V ,TJ= 150^OC

A

Maximum Capacitance at VF=VR=0

t_rr

Maximum Reverse Recovery Time From

I^F=-IR =10mA to IRR=-1mA ,VR=6V RL=100 

Typical Maximum Thermal Resistance

RJA

350

^OC / W

^OC

Junction Temperature and Storage Temperature Range

TJ,TS

-65 to +175

NOTE:

1. CJ at VR=0, f=1MHZ

2. From IF=10mA to IR=1mA, VR=6Volts, RL=100

February 22,2014-REV.06

PAGE . 1

12 3 4

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1N4448A0	TSC	获取价格	500mW High Speed Switching Diode
1N4448AMO	NXP	获取价格	0.15A, 75V, SILICON, SIGNAL DIODE
1N4448-AP	MCC	获取价格	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2
1N4448-B	RECTRON	获取价格	Rectifier Diode, 1 Element, 100V V(RRM), Silicon, DO-35, MINIMELF-2
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