1N4448-B PDF预览

1N4448-B

更新时间: 2025-07-30 19:53:07
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
1页 11K
描述
Rectifier Diode, 1 Element, 100V V(RRM), Silicon, DO-35, MINIMELF-2

1N4448-B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-35
包装说明:MINIMELF-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.09外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-35JESD-30 代码:O-LELF-R2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):265最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:5 µA最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4448-B 数据手册

  
RECTRON  
SEMICONDUCTOR  
1N4448  
TECHNICAL SPECIFICATION  
1N4448 SIGNAL DIODE  
Absolute Maximum Ratings (Ta=25 C)  
°
)
Dimensions (DO-35  
Items  
Symbol Ratings Unit  
Reverse Voltage  
Reverse Recovery  
Time  
VR  
trr  
75  
4
V
ns  
DO-35  
26 MIN  
0.457  
DIA.  
0.559  
Power Dissipation  
P
500  
mW  
3.33mW/ C (25 C)  
°
°
Forward Current  
Junction Temp.  
Storage Temp.  
IF  
Tj  
500  
-65 to 175  
mA  
C
°
C
°
4.2  
max.  
Tstg -65 to 175  
2.0  
DIA.  
max.  
Mechanical Data  
Items  
Materials  
DO-35  
Hermetically sealed glass  
Package  
Case  
26 MIN  
Lead/Finish Double stud/Solder Plating  
Chip Glass Passivated  
Dimensions in millimeters  
Electrical Characteristics (Ta=25 C)  
°
Ratings  
Minimum Breakdown Voltage  
IR= 5.0uA  
Symbol  
BV  
Ratings  
Unit  
V
75  
100  
1.0  
IR= 100uA  
Peak Forward Surge Current PW= 1sec.  
Maximum Forward Voltage  
IF= 100mA  
IFsurge  
VF  
A
V
1.0  
Maximum Reverse Current  
VR= 20V  
VR= 75V  
IR  
uA  
0.025  
5.0  
VR= 20V, Tj= 150 C  
50  
°
Maximum Junction Capacitance  
VR= 0, f= 1 MHz  
Maximum Reverse Recovery Time  
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100  
Cj  
trr  
pF  
ns  
4
4
1315 John Reed Court, Industry, CA 91745  
www.rectron.com  
RECTRON USA  
Tel: (626) 333-3802 Fax: (626) 330-6296  

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