Datasheet > 1N4448.T50R

1N4448.T50R

更新时间： 2024-09-14 08:25:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	43K
描述
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35

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1N4448.T50R 数据手册

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

Small Signal Diode

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_RRM

I_F(AV)

I_FSM

Maximum Repetitive Reverse Voltage

100

200

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

1.0

4.0

Pulse Width = 1.0 microsecond

Storage Temperature Range

-65 to +200

T_stg

T_J

Operating Junction Temperature

175

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Characteristic

Max

Units

1N/FDLL 914/A/B / 4148 / 4448

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

500

300

R_θJA

°C/W

2002 Fairchild Semiconductor Corporation

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B

12 3

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