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1N4448.T26R PDF预览

1N4448.T26R

更新时间: 2024-11-14 14:31:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 43K
描述
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35

1N4448.T26R 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.58
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.004 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N4448.T26R 数据手册

 浏览型号1N4448.T26R的Datasheet PDF文件第2页浏览型号1N4448.T26R的Datasheet PDF文件第3页 
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448  
Small Signal Diode  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
100  
200  
V
Average Rectified Forward Current  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
Storage Temperature Range  
-65 to +200  
C
Tstg  
TJ  
°
Operating Junction Temperature  
175  
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Characteristic  
Max  
Units  
1N/FDLL 914/A/B / 4148 / 4448  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
500  
300  
mW  
RθJA  
°C/W  
2002 Fairchild Semiconductor Corporation  
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B  

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