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1N4448-TR PDF预览

1N4448-TR

更新时间: 2024-10-30 04:24:15
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 38K
描述
Silicon Epitaxial Planar Diodes

1N4448-TR 数据手册

 浏览型号1N4448-TR的Datasheet PDF文件第2页浏览型号1N4448-TR的Datasheet PDF文件第3页浏览型号1N4448-TR的Datasheet PDF文件第4页 
1N4148.1N4448  
Vishay Telefunken  
Silicon Epitaxial Planar Diodes  
Features  
Electrically equivalent diodes: 1N4148 – 1N914  
1N4448 – 1N914B  
Applications  
94 9367  
Extreme fast switches  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Test Conditions  
Type  
Symbol  
V
RRM  
Value  
100  
75  
Unit  
V
V
V
R
Peak forward surge current  
Repetitive peak forward current  
Forward current  
Average forward current  
Power dissipation  
t =1 s  
I
2
500  
300  
150  
440  
500  
200  
A
p
FSM  
I
mA  
mA  
mA  
mW  
mW  
C
FRM  
I
F
V =0  
I
R
FAV  
l=4mm, T =45 C  
l=4mm, T 25 C  
P
V
P
V
L
L
Junction temperature  
T
j
Storage temperature range  
T
stg  
–65...+200  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=4mm, T =constant  
Symbol  
R
thJA  
Value  
350  
Unit  
K/W  
L
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85521  
Rev. 2, 01-Apr-99  
1 (4)  

1N4448-TR 替代型号

型号 品牌 替代类型 描述 数据表
1N4448TR FAIRCHILD

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