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1N4448-TP PDF预览

1N4448-TP

更新时间: 2024-11-24 20:06:11
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 300K
描述
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2

1N4448-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:DO-35
包装说明:O-XALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.24
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-XALF-W2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.15 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.004 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4448-TP 数据手册

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NOT RECOMMENDED FOR NEW DESIGNS  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
1N4448  
Features  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
·
·
·
Low Current Leakage  
Metalurgically Bonded Construction  
Low Cost  
500mW 100Volt  
Switching Diode  
·
Marking : Cathode band and type number  
Moisture Sensitivity Level 1  
Maximum Ratings  
DO-35  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 35°C/W Junction To Ambient  
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Reverse Voltage  
Peak Reverse  
Voltage  
Average Rectified  
Current  
VR  
VRM  
75V  
100V  
A
IO  
150mA Resistive Load  
f >= 50Hz  
Cathode  
Mark  
Power Dissipation  
Junction  
Temperature  
Peak Forward Surge  
Current  
PTOT  
TJ  
500mW  
150°C  
B
D
IFSM  
500mA t<1s  
C
Instantaneous  
Forward Voltage  
VF  
1.0V(MAX) IFM = 100mA;  
0.62-0.72V IFM = 5.0mA  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
VR=20Volts  
TJ = 25°C  
TJ = 150°C  
VR=75Volts  
Measured at  
1.0MHz, VR=4.0V  
IF=10mA  
IR  
25nA  
50mA  
5µA  
DIMENSIONS  
INCHES  
MIN  
---  
---  
---  
MM  
MIN  
CJ  
Trr  
4pF  
DIM  
A
B
C
D
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
NOTE  
---  
---  
2.00  
.52  
---  
Reverse Recovery  
Time  
4nS  
---  
VR = 6V  
1.000  
25.40  
RL=100W  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.  
www.mccsemi.com  
Revision: C  
2013/02/18  
1 of 4  

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