Datasheet > 1N4448HLP_08

1N4448HLP_08

更新时间： 2022-09-12 12:56:49

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
3页	91K
描述
SURFACE MOUNT FAST SWITCHING DIODE

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1N4448HLP_08 数据手册

1N4448HLP

SURFACE MOUNT FAST SWITCHING DIODE

Features

Mechanical Data

•

Fast Switching Speed

•

Case: DFN1006-2

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: Cathode Dot

Terminals: Finish - NiPdAu over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.001 grams (approximate)

Ultra-Small Surface Mount Package

For General Purpose Switching Applications

High Conductance

Lead Free by Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

•

DFN1006-2

BOTTOM VIEW

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

Symbol

V_RM

Value

100

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current

Average Rectified Output Current

250

125

V_R(RMS)

I_FM

I_O

2.0

1.0

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation (Note 4)

Symbol

Value

250

Unit

P_D

Thermal Resistance Junction to Ambient (Note 4)

Operating and Storage Temperature Range

500

°C/W

°C

R_θ

-65 to +150

T_J, T_STG

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Conditions

Reverse Breakdown Voltage (Note 3)

V_(BR)R

⎯

I_R= 100μA

I_F= 5.0mA

I_F= 10mA

I_F= 100mA

I_F= 150mA

0.62

⎯

0.72

0.855

1.0

Forward Voltage

V_F

1.25

⎯

V_R= 80V

μA

100

V_R= 75V, T_J= 150°C

V_R= 25V, T_J= 150°C

V_R= 20V

Peak Reverse Current (Note 3)

I_R

⎯

Total Capacitance

3.0

4.0

C_T

t_rr

⎯

V_R= 0.5V, f = 1.0MHz

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Short duration pulse test used to minimize self-heating effect.

4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

1 of 3

www.diodes.com

March 2008

1N4448HLP

Document number: DS30590 Rev. 8 - 2

12 3

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