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1N4448_12 PDF预览

1N4448_12

更新时间: 2024-10-30 12:51:39
品牌 Logo 应用领域
RECTRON 稳压二极管局域网
页数 文件大小 规格书
5页 222K
描述
SILICON PLANAR ZENER DIODE

1N4448_12 数据手册

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RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
1N4448  
SILICON PLANAR ZENER DIODE  
FEATURES  
Fast Switching Device(TRR<4.0nS)  
DO-35 Package (JEDEC)  
*
*
*
*
*
*
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
DO-35  
Compression Bonded Construction  
All external surfaces are corrosion resistant and leads  
are readily solderable  
(
)
.022 0.56  
DIA.  
(
)
.018 0.46  
(
)
1.02 26.0  
MIN.  
(
)
.165 4.2  
MAX.  
(
)
.079 2.0  
DIA.  
MAX.  
(
)
1.02 26.0  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
SYMBOL  
Vrm  
1N4448  
UNITS  
Volts  
RATINGS  
Peak Reverse Voltage  
100  
70  
Maximum DC Blocking Voltage  
VDc  
Volts  
I
Maximum Forward Continuous Current  
FM  
100  
mAmps  
Maximum Average Forward Rectified Current  
Non-Repetitive Peak Forward Surge Current  
I
150  
1
mAmps  
O
I
Amps  
nS  
FSM  
T
4
Typical Reverse Recovery Time(I =I =30mA,I =0.1X ,R =100)  
rr  
F
R
rr  
IR  
L
Typical Junction Capacitance(V =0V,f=1MHz)  
R
C
T
4
pF  
P
D
Maximum Power Dissipation  
500  
mW  
OC  
TJ,TSTG  
Operating and Storage Temperature Range  
-65 to + 200  
O
ELECTRICAL CHARACTERISTICS (@T  
A
=25 C unless otherwise noted)  
SYMBOL  
1N4448  
0.72  
1.0  
UNITS  
Volts  
CHARACTERISTICS  
@I =5mA  
F
Maximum Instantaneous Forward Voltage  
V
F
@I =100mA  
F
25  
nAmps  
uAmps  
@V =20V  
R
Maximum Instantaneous Reverse Current  
I
R
@V =75V  
R
5
2012-9  

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