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1N4448_12 PDF预览

1N4448_12

更新时间: 2024-11-14 07:21:15
品牌 Logo 应用领域
威世 - VISHAY 二极管开关
页数 文件大小 规格书
4页 104K
描述
Small Signal Fast Switching Diodes

1N4448_12 数据手册

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1N4448  
Vishay Semiconductors  
Small Signal Fast Switching Diodes  
Features  
• Silicon epitaxial planar diodes  
• AEC-Q101 qualified  
• Compliant to RoHS directive 2002/95/EC  
and in accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21  
definition  
94 9367  
Applications  
• Extreme fast switches  
Packaging Codes/Options:  
TR/10 k per 13" reel (52 mm tape), 50 k/box  
Mechanical Data  
Case: DO-35  
TAP/10 k per Ammopack (52 mm tape), 50 k/box  
Weight: approx. 125 mg  
Cathode Band Color: black  
Parts Table  
Part  
Ordering code  
Type Marking  
V4448  
Remarks  
1N4448  
1N4448-TAP or 1N4448-TR  
Ammopack/tape and reel  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
100  
75  
Unit  
V
VRRM  
VR  
Repetitive peak reverse voltage  
Reverse voltage  
V
tp = 1 µs  
IFSM  
IFRM  
IF  
Peak forward surge current  
Repetitive peak forward current  
Forward continuous current  
Average forward current  
2
A
500  
300  
150  
440  
500  
mA  
mA  
mA  
mW  
mW  
VR = 0  
IFAV  
Ptot  
Ptot  
l = 4 mm, TL = 45 °C  
l = 4 mm, TL 25 °C  
Power dissipation  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
l = 4 mm, TL = constant  
Symbol  
RthJA  
Value  
350  
Unit  
K/W  
°C  
Thermal resistance junction to ambient air  
Junction temperature  
Tj  
175  
Tstg  
Storage temperature range  
- 65 to + 150  
°C  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number 81858  
Rev. 1.1, 17-Aug-10  
www.vishay.com  
1

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