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ZXMC3AMCTA PDF预览

ZXMC3AMCTA

更新时间: 2024-01-04 03:01:48
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
11页 736K
描述
30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

ZXMC3AMCTA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:SMALL OUTLINE, R-PDSO-N8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:1.7
其他特性:HIGH RELIABILITY外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):3.7 A最大漏极电流 (ID):2.9 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-N8JESD-609代码:e4
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):2.45 W最大脉冲漏极电流 (IDM):13 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMC3AMCTA 数据手册

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A Product Line of  
Diodes Incorporated  
ZXMC3AMC  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
N-channel – Q1 P-channel – Q2  
Unit  
-30  
±20  
-2.7  
-2.2  
-2.1  
-9.2  
-2.8  
-9.2  
30  
±20  
3.7  
3.0  
2.9  
13  
V
Gate-Source Voltage  
VGSS  
(Notes 4 & 7)  
Continuous Drain Current  
V
V
GS = 10V TA = 70°C (Notes 4 & 7)  
(Notes 3 & 7)  
ID  
A
Pulsed Drain Current  
(Notes 6 & 7)  
(Notes 4 & 7)  
(Notes 6 & 7)  
GS = 10V  
IDM  
IS  
Continuous Source Current (Body diode)  
Pulse Source Current (Body diode)  
3.2  
13  
ISM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
N-channel – Q1 P-channel – Q2  
Unit  
1.50  
12  
(Notes 3 & 7)  
2.45  
19.6  
1.13  
9
(Notes 4 & 7)  
Power Dissipation  
Linear Derating Factor  
W
mW/°C  
PD  
(Notes 5 & 7)  
1.70  
13.6  
83.3  
51.0  
111  
73.5  
(Notes 5 & 8)  
(Notes 3 & 7)  
(Notes 4 & 7)  
Thermal Resistance, Junction to Ambient  
(Notes 5 & 7)  
RθJA  
°C/W  
°C  
(Notes 5 & 8)  
(Notes 7 & 9)  
Thermal Resistance, Junction to Lead  
17.1  
RθJL  
Operating and Storage Temperature Range  
-55 to +150  
TJ, TSTG  
Notes:  
3. For a device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is  
measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.  
4. Same as note (3) except the device is measured at t < 5 sec.  
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.  
6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.  
7. For a dual device with one active die.  
8. For dual device with 2 active die running at equal power.  
9. Thermal resistance from junction to solder-point (at the end of the drain lead).  
2 of 11  
www.diodes.com  
December 2010  
© Diodes Incorporated  
ZXMC3AMC  
Document number: DS35088 Rev. 1 - 2  

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