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ZXMC4559DN8TA PDF预览

ZXMC4559DN8TA

更新时间: 2024-02-18 16:18:39
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
10页 284K
描述
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET

ZXMC4559DN8TA 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:0.89
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):3.6 A
最大漏极电流 (ID):3.6 A最大漏源导通电阻:0.055 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs):2.1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMC4559DN8TA 数据手册

 浏览型号ZXMC4559DN8TA的Datasheet PDF文件第2页浏览型号ZXMC4559DN8TA的Datasheet PDF文件第3页浏览型号ZXMC4559DN8TA的Datasheet PDF文件第4页浏览型号ZXMC4559DN8TA的Datasheet PDF文件第5页浏览型号ZXMC4559DN8TA的Datasheet PDF文件第6页浏览型号ZXMC4559DN8TA的Datasheet PDF文件第7页 
ZXMC4559DN8  
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET  
SUMMARY  
N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A  
P-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.9A  
DESCRIPTION  
This new generation of TRENCH MOSFETs from Zetex utilizes a unique  
structure that com bines the benefits of low on-resistance with fast switching  
speed. This m akes them ideal for high efficiency, low voltage, power  
m anagem ent applications.  
SO8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
Motor Drive  
LCD backlighting  
Q1 = N-CHANNEL  
Q2 = P-CHANNEL  
ORDERING INFORMATION  
DEVICE  
REEL TAPE  
QUANTITY  
PER REEL  
WIDTH  
12m m  
12m m  
ZXMC4559DN8TA  
ZXMC4559DN8TC  
7’‘  
500 units  
PINOUT  
13‘  
2500 units  
DEVICE MARKING  
ZXMC  
4559  
Top view  
ISSUE 5 - MAY 2005  
1
S E M IC O N D U C T O R S  

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