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ZXMC6A09DN8 PDF预览

ZXMC6A09DN8

更新时间: 2024-11-02 21:53:43
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
10页 291K
描述
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET

ZXMC6A09DN8 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.23
最小漏源击穿电压:60 V最大漏极电流 (ID):5 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL AND P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMC6A09DN8 数据手册

 浏览型号ZXMC6A09DN8的Datasheet PDF文件第2页浏览型号ZXMC6A09DN8的Datasheet PDF文件第3页浏览型号ZXMC6A09DN8的Datasheet PDF文件第4页浏览型号ZXMC6A09DN8的Datasheet PDF文件第5页浏览型号ZXMC6A09DN8的Datasheet PDF文件第6页浏览型号ZXMC6A09DN8的Datasheet PDF文件第7页 
ZXMC6A09DN8  
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET  
SUMMARY  
N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A  
P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A  
DESCRIPTION  
This new generation of trench MOSFETs from Zetex utilizes a unique structure  
that com bines the benefits of low on-resistance with fast switching speed. This  
m akes them ideal for high efficiency, low voltage, power m anagem ent  
applications.  
SO8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
Motor drive  
LCD backlighting  
Q1 = N-CHANNEL  
Q2 = P-CHANNEL  
ORDERING INFORMATION  
DEVICE  
REEL TAPE  
QUANTITY  
PER REEL  
WIDTH  
12m m  
12m m  
ZXMC6A09DN8TA  
ZXMC6A09DN8TC  
7’‘  
500 units  
PINOUT  
13‘  
2500 units  
DEVICE MARKING  
ZXMC  
6A09  
Top view  
ISSUE 3 - AUGUST 2004  
1

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