生命周期: | Active | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.19 | 其他特性: | LOW THRESHOLD |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 3.9 A | 最大漏源导通电阻: | 0.045 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大脉冲漏极电流 (IDM): | 25 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMD63C02X | ZETEX |
获取价格 |
20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMD63C02X | DIODES |
获取价格 |
20V Dual N and P-Channel Enhancement Mode Mosfet | |
ZXMD63C02XTA | DIODES |
获取价格 |
20V Dual N and P-Channel Enhancement Mode Mosfet | |
ZXMD63C02XTA | ZETEX |
获取价格 |
20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMD63C02XTC | DIODES |
获取价格 |
20V Dual N and P-Channel Enhancement Mode Mosfet | |
ZXMD63C02XTC | ZETEX |
获取价格 |
20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMD63C03X | ZETEX |
获取价格 |
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMD63C03X | DIODES |
获取价格 |
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMD63C03X_05 | ZETEX |
获取价格 |
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMD63C03XTA | DIODES |
获取价格 |
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET |