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ZXMD63N02X PDF预览

ZXMD63N02X

更新时间: 2024-11-30 07:42:35
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 154K
描述
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMD63N02X 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.64
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):1.8 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMD63N02X 数据手册

 浏览型号ZXMD63N02X的Datasheet PDF文件第2页浏览型号ZXMD63N02X的Datasheet PDF文件第3页浏览型号ZXMD63N02X的Datasheet PDF文件第4页浏览型号ZXMD63N02X的Datasheet PDF文件第5页浏览型号ZXMD63N02X的Datasheet PDF文件第6页浏览型号ZXMD63N02X的Datasheet PDF文件第7页 
ZXMD63N02X  
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS=20V; RDS(ON)=0.13Ω; ID=2.4A  
V
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilises a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
MSOP8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23 package  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm)  
QUANTITY  
PER REEL  
ZXMD63N02XTA  
ZXMD63N02XTC  
7
12mm embossed  
12mm embossed  
1000 units  
4000 units  
Top View  
13  
DEVICE MARKING  
ZXM63N02  
ISSUE 1 - JUNE 2004  
1

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