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ZXMC4A16DN8TA PDF预览

ZXMC4A16DN8TA

更新时间: 2024-11-01 03:52:31
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
10页 184K
描述
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET

ZXMC4A16DN8TA 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:SOIC-8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.19
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):4 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):24 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMC4A16DN8TA 数据手册

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ZXMC4A16DN8  
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET  
SUMMARY  
N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A  
P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A  
DESCRIPTION  
This new generation of trench MOSFETs from Zetex  
utilises a unique structure that com bines the benefits  
of low on-resistance with fast switching speed. This  
m akes them ideal for high efficiency, low voltage,  
power m anagem ent applications.  
SO8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
Motor drive  
LCD backlighting  
ORDERING INFORMATION  
DEVICE  
REEL  
S IZE  
QUANTITY PER  
REEL  
TAPE WIDTH  
PINOUT  
7”  
12m m  
12m m  
500  
ZXMC4A16DN8TA  
ZXMC4A16DN8TC  
13”  
2,500  
DEVICE MARKING  
ZXMC  
4A16  
TOP VIEW  
ISSUE 1 - NOVEMBER 2004  
S E M IC O N D U C T O R S  
1

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