是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SOIC-8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.19 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 0.05 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大脉冲漏极电流 (IDM): | 24 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMC4A16DN8TC | DIODES |
获取价格 |
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET | |
ZXMC4A16DN8TC | ZETEX |
获取价格 |
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET | |
ZXMC6A09DN8 | ZETEX |
获取价格 |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
ZXMC6A09DN8 | DIODES |
获取价格 |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
ZXMC6A09DN8TA | ZETEX |
获取价格 |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
ZXMC6A09DN8TA | DIODES |
获取价格 |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
ZXMC6A09DN8TC | DIODES |
获取价格 |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
ZXMC6A09DN8TC | ZETEX |
获取价格 |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
ZXMD63C02X | ZETEX |
获取价格 |
20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMD63C02X | DIODES |
获取价格 |
20V Dual N and P-Channel Enhancement Mode Mosfet |