RoHS
COMPLIANT
YJS4953B
P-Channel and P-Channel Complementary MOSFET
Product Summary
● VDS
-30 V
● ID
-5.1 A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
<43 mΩ
<59 mΩ
General Description
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
● Moisture Sensitivity Level 3
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Wireless charger
● Load switch
● Power management
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
-30
±20
V
V
-5.1
TA=25℃
Drain Current
ID
A
A
-3
TA=100℃
Pulsed Drain Current A
Total Power Dissipation B
IDM
-40
2
TA=25℃
PD
W
℃
0.8
TA=100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
■Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient C
Steady-State
RθJA
50
60
℃/W
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJS4953B
F2
Q4953B
4000
8000
64000
13“ reel
1 / 7
S-E345
Rev.1.0,10-May-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com