RoHS
COMPLIANT
YJT225G04HJQ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
40V
● ID
225A
● RDS(ON)( at VGS=10V)
● 100% EAS Tested
● 100% ▽VDS Tested
<1.2mΩ
General Description
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
● Part no. with suffix ”Q” means AEC-Q101 qualified
Applications
● High power inverter system
● Uninterruptible power supply
● LCDM appliances
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
40
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
25
V
TA=25℃
17.8
225
159
400
1441
2
TA=100℃
TC=25℃
Drain Current
ID
A
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
Total Power Dissipation C
PD
W
166
83
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
60
Max
72
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
0.75
0.9
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJT225G04HJQ
F1
YJT225G04HJ
2000
4000
20000
13“ reel
1 / 7
S-B3179
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,25-Sep-23