RoHS
COMPLIANT
YJT300G10A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
● ID
300A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=6V)
● 100% EAS Tested
● 100% ▽VDS Tested
<1.55mΩ
<2.4mΩ
General Description
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
● Moisture Sensitivity Level 1
Applications
● High power inverter system
● Uninterruptible power supply
● LCDM appliances
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
100
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
V
23
TA=25℃
16
TA=100℃
TC=25℃
Drain Current
ID
A
300
212
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
900
A
EAS
2116
3.3
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1.6
Total Power Dissipation C
PD
W
375
187
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
38
Max
45
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
0.25
0.5
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJT300G10A
F1
YJT300G10A
2000
4000
20000
13“ reel
1 / 8
S-E375
Rev.1.0,25-Jul-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com