Datasheet > YJSD03GP10A

YJSD03GP10A

更新时间： 2024-05-14 22:08:24

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	289K
描述
SOP-8

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中文翻译

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数据手册

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YJSD03GP10A 数据手册

RoHS

COMPLIANT

YJSD03GP10A

P-Channel and P-Channel Complementary MOSFET

Product Summary

● V_DS

-100V

● I_D

-3A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

＜110mΩ

＜120mΩ

General Description

● Split Gate Trench MOSFET technology

● Excellent package for heat dissipation

● Moisture Sensitivity Level 3

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Load switching

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

-100

±20

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-3

T_A=25℃

Drain Current

I_D

-1.9

T_A=100℃

Pulsed Drain Current ^A

Total Power Dissipation ^C

I_DM

-25

1.3

T_A=25℃

P_D

℃

0.5

T_A=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

■Thermal resistance

Parameter

Symbol

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^C

Steady-State

R_θJA

℃/W

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

QD03GP10A

DELIVERY MODE

CODE

YJSD03GP10A

4000

8000

64000

13“ reel

1 / 7

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

S-E222

Rev.1.0,11-Apr-22

12 3 4 5 6 7

中文翻译

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