RoHS
COMPLIANT
YJSD07N04B
N-Channel and N-Channel Complementary MOSFET
Product Summary
● VDS
40V
● ID
7A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
<32mΩ
<50mΩ
General Description
● Trench Power MV MOSFET technology
● High Speed switching
● Moisture Sensitivity Level 3
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● Load switch
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
40
V
V
±20
7
TA=25℃
Drain Current
ID
A
4
TA=100℃
Pulsed Drain Current A
Avalanche energy B
IDM
30
A
EAS
14
mJ
2
TA=25℃
Total Power Dissipation C
PD
W
0.8
TA=100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient D
Steady-State
RθJA
50
60
℃/W
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJSD07N04B
F2
Q07N04B
4000
8000
64000
13“ reel
1 / 8
S-E271
Rev1.1,03-Jan-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com