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YJT300G06H PDF预览

YJT300G06H

更新时间: 2024-11-21 15:18:23
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
8页 708K
描述
TOLL

YJT300G06H 数据手册

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RoHS  
COMPLIANT  
YJT300G06H  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
60V  
ID  
300A  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=6V)  
100% EAS Tested  
100% VDS Tested  
2mΩ  
2.5mΩ  
General Description  
Double trench MOSFET technology  
Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Moisture Sensitivity Level 1  
Applications  
High power inverter system  
Uninterruptible power supply  
LCDM appliances  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
60  
±20  
V
V
30  
TA=25  
19  
TA=100℃  
TC=25℃  
Drain Current  
ID  
A
300  
190  
TC =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
1200  
1690  
4
A
EAS  
mJ  
TA=25℃  
TA=100℃  
TC=25℃  
TC =100℃  
1.6  
Total Power Dissipation C  
PD  
W
312  
125  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
25  
Max  
30  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
0.32  
0.4  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJT300G06H  
F1  
YJT300G06H  
2000  
4000  
20000  
13reel  
1 / 8  
S-E288  
Rev.1.0,09-Jan-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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