RoHS
COMPLIANT
YJT300G06H
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
300A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=6V)
● 100% EAS Tested
● 100% ▽VDS Tested
<2mΩ
<2.5mΩ
General Description
● Double trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
● Moisture Sensitivity Level 1
Applications
● High power inverter system
● Uninterruptible power supply
● LCDM appliances
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
60
±20
V
V
30
TA=25℃
19
TA=100℃
TC=25℃
Drain Current
ID
A
300
190
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
1200
1690
4
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1.6
Total Power Dissipation C
PD
W
312
125
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
25
Max
30
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
0.32
0.4
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJT300G06H
F1
YJT300G06H
2000
4000
20000
13“ reel
1 / 8
S-E288
Rev.1.0,09-Jan-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com