RoHS
COMPLIANT
YJSD04N06C
N-Channel and N-Channel Complementary MOSFET
Product Summary
● VDS
60V
● ID
4A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
<75mΩ
<90mΩ
General Description
● Trench Power MV MOSFET technology
● High Speed switching
● Moisture Sensitivity Level 3
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● Load switch
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
60
V
V
±20
4
2.5
TA=25℃
Drain Current
ID
A
A
TA=100℃
Pulsed Drain Current A
Total Power Dissipation B
IDM
20
1.6
TA=25℃
PD
W
℃
0.6
TA=100℃
-55~+150
Junction and Storage Temperature Range
TJ ,TSTG
■Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient C
Steady-State
RθJA
60
75
℃/W
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJSD04N06C
F2
QD04N06C
4000
8000
64000
13“ reel
1 / 8
S-E229
Rev.1.0,8-Jun-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com