RoHS
COMPLIANT
YJT1D4G04AJ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
40V
● ID
210A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<1.4mΩ
<1.9mΩ
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
J
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
40
±20
V
V
32
TA=25℃
TA=100℃
TC=25℃
TC =100℃
Continuous Drain Current
(Note 1,2 )
Steady-State
20
ID
A
210
Continuous Drain Current
(Note 1,3 )
Steady-State
132
Pulsed Drain Current
Avalanche energy
IDM
840
A
TC=25℃, tp=100µs
VG=10V, RG=25Ω, L=0.5mH, IAS=49A
TA=25℃
EAS
600.25
2.7
mJ
Total Power Dissipation
(Note 1,2)
Steady-State
1.1
TA=100℃
TC=25℃
PD
W
113
Total Power Dissipation
(Note 1,3 )
Steady-State
45
TC =100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
36
Max
45
Units
Thermal Resistance Junction-to-Ambient (Note 2)
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
0.9
1.1
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJT1D4G04AJ
F1
YJT1D4G04AJ
2000
4000
20000
13“ reel
1 / 8
S-E519
Rev.1.0,25-Mar-24
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com