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YJT1D4G04AJ PDF预览

YJT1D4G04AJ

更新时间: 2024-11-21 18:09:47
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扬杰 - YANGJIE /
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8页 692K
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YJT1D4G04AJ 数据手册

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RoHS  
COMPLIANT  
YJT1D4G04AJ  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
40V  
ID  
210A  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
100% EAS Tested  
100% VDS Tested  
1.4mΩ  
1.9mΩ  
General Description  
Split gate trench MOSFET technology  
Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
Moisture Sensitivity Level 1  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
Power switching application  
Uninterruptible power supply  
DC-DC convertor  
Absolute Maximum Ratings (T =25unless otherwise noted)  
J
Parameter  
Symbol  
Limit  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
40  
±20  
V
V
32  
TA=25  
TA=100℃  
TC=25℃  
TC =100℃  
Continuous Drain Current  
(Note 1,2 )  
Steady-State  
20  
ID  
A
210  
Continuous Drain Current  
(Note 1,3 )  
Steady-State  
132  
Pulsed Drain Current  
Avalanche energy  
IDM  
840  
A
TC=25, tp=100µs  
VG=10V, RG=25Ω, L=0.5mH, IAS=49A  
TA=25℃  
EAS  
600.25  
2.7  
mJ  
Total Power Dissipation  
(Note 1,2)  
Steady-State  
1.1  
TA=100℃  
TC=25℃  
PD  
W
113  
Total Power Dissipation  
(Note 1,3 )  
Steady-State  
45  
TC =100℃  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
36  
Max  
45  
Units  
Thermal Resistance Junction-to-Ambient (Note 2)  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
0.9  
1.1  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJT1D4G04AJ  
F1  
YJT1D4G04AJ  
2000  
4000  
20000  
13reel  
1 / 8  
S-E519  
Rev.1.0,25-Mar-24  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com