Datasheet > YJU3724A

YJU3724A

更新时间： 2024-04-09 19:02:31

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
10页	590K
描述
PDFN3030-8L

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中文翻译

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数据手册

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YJU3724A 数据手册

RoHS

COMPLIANT

YJU3724A

N-Channel and P-Channel Complementary MOSFET

Product Summary

NMOS

● V_DS

30V

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜35mΩ

＜55mΩ

PMOS

● V_DS

-30V

● I_D

-3A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

＜75mΩ

＜110mΩ

General Description

● Trench Power LV MOSFET technology

● Excellent package for heat dissipation

Applications

● Load switching

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

NMOS

PMOS

-30

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

±20

V_GS

±20

-3

T_A=25℃

Drain Current

I_D

2.5

-1.9

T_A=100℃

Pulsed Drain Current ^A

Total Power Dissipation ^B

I_DM

-20

1.1

1.25

0.5

T_A=25℃

P_D

℃

0.45

-55～+150

T_A=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

■Thermal resistance

NMOS

PMOS

Parameter

Symbol

Units

Typ

Max

Typ

Max

100

Thermal Resistance Junction-to-Ambient ^C

Steady-State

R_θJA

110

℃/W

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJU3724A

Q3724A

3000

30000

120000

7“ reel

1 / 10

S-E380

Rev.1.0,03-Aug-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7...10

中文翻译

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