Datasheet > YJSD12N03A

YJSD12N03A

更新时间： 2024-04-09 19:02:56

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	1143K
描述
SOP-8

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中文翻译

获取价格

数据手册

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YJSD12N03A 数据手册

RoHS

COMPLIANT

YJSD12N03A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

30V

● I_D

12A

● R_DS(ON)( at V_GS=10V)

＜12 mohm

● R_DS(ON)( at V_GS=4.5V)

＜15 mohm

General Description

● Trench Power LV MOSFET technology

● High density cell design for low R_DS(ON)

● High Speed switching

Applications

● Battery protection

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

Drain Current

V_DS

V_GS

±20

T_A=25℃ @ Steady State

T_A=70℃ @ Steady State

I_D

9.6

Pulsed Drain Current ^A

Total Power Dissipation @ T_A=25℃

I_DM

2.5

P_D

Thermal Resistance Junction-to-Ambient @ Steady State ^B

Junction and Storage Temperature Range

R_θJA

℃/W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJSD12N03A

Q12N03..

4000

8000

64000

13“ reel

1 / 7

S-E606

Rev.3.1,14-Oct-20

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

中文翻译

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