YJS4409B
Electrical Characteristics (T =25℃ unless otherwise noted)
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J
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=-250μA
VDS=-30V, VGS=0V
VDS=-30V, VGS=0V, Tj=150℃
VGS= ±25V, VDS=0V
VDS= VGS, ID=-250μA
VGS=-20V, ID=-18A
VGS=-10V, ID=-15A
VGS=-4.5V, ID=-10A
IS=-18A, VGS=0V
-30
-
-
-
-1
V
-
-
Zero Gate Voltage Drain Current
IDSS
μA
-
-100
±100
-2.5
5.3
6
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
-
-
nA
V
VGS(th)
-1
-
-1.8
4
Static Drain-Source On-Resistance
RDS(on)
-
4.5
7.5
-0.85
7.5
-
mΩ
-
10
Diode Forward Voltage
Gate resistance
VSD
RG
IS
-
-1.2
-
V
Ω
A
f=1MHz
-
Maximum Body-Diode Continuous Current
Dynamic Parameters
Input Capacitance
-
-18
Ciss
Coss
Crss
-
-
-
3530
600
-
-
-
Output Capacitance
VDS=-15V, VGS=0V, f=1MHz
pF
Reverse Transfer Capacitance
Switching Parameters
Total Gate Charge
550
Qg
Qgs
Qgd
Qrr
trr
-
-
-
-
-
-
-
-
-
38
8
-
-
-
-
-
-
-
-
-
Gate-Source Charge
Gate-Drain Charge
VGS=-10V, VDS=-15V, ID=-18A
IF=-18A, di/dt=100A/us
nC
11
33
50
6
Reverse Recovery Charge
Reverse Recovery Time
Turn-on Delay Time
nC
ns
tD(on)
tr
tD(off)
tf
Turn-on Rise Time
10
78
40
VGS=-10V, VDD=-15V, ID=-18A
ns
RGEN=3Ω
Turn-off Delay Time
Turn-off fall Time
A. Repetitive rating; pulse width limited by max. junction temperature.
B. TJ=25℃, VDD=-25V, VG=-10V, RG=25Ω, L=2mH, IAS=-20A.
C. Pd is based on max. junction temperature, using junction-case and junction-ambient thermal resistance.
D. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in the still air environment with TA =25℃.
The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design.
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S-E324
Rev.1.0,24-Mar-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com