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YJS4435B PDF预览

YJS4435B

更新时间: 2024-11-19 15:19:31
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
7页 563K
描述
SOP-8

YJS4435B 数据手册

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RoHS  
COMPLIANT  
YJS4435B  
P-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
-30 V  
ID  
-10 A  
RDS(ON)( at VGS=-10V)  
RDS(ON)( at VGS=-4.5V)  
100% EAS Tested  
19 mΩ  
28 mΩ  
General Description  
Trench Power LV MOSFET technology  
High density cell design for Low RDS(ON)  
High Speed switching  
● Moisture Sensitivity Level 3  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
Battery protection  
Load switch  
Power management  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
-30  
±20  
V
V
-10  
TA=25  
Drain Current  
ID  
A
-6.3  
TA=100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
-80  
A
EAS  
56  
mJ  
2.5  
TA=25℃  
Total Power Dissipation C  
PD  
W
1
TA=100℃  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
Typ  
Max  
Units  
Thermal Resistance Junction-to-Ambient D  
Steady-State  
RθJA  
40  
50  
/W  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJS4435B  
F2  
Q4435B  
4000  
8000  
64000  
13reel  
1 / 7  
S-E309  
Rev.1.0,13-Mar-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com