RoHS
COMPLIANT
YJS4435B
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-30 V
● ID
-10 A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
● 100% EAS Tested
<19 mΩ
<28 mΩ
General Description
● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
● Moisture Sensitivity Level 3
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Battery protection
● Load switch
● Power management
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
-30
±20
V
V
-10
TA=25℃
Drain Current
ID
A
-6.3
TA=100℃
Pulsed Drain Current A
Avalanche energy B
IDM
-80
A
EAS
56
mJ
2.5
TA=25℃
Total Power Dissipation C
PD
W
1
TA=100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient D
Steady-State
RθJA
40
50
℃/W
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJS4435B
F2
Q4435B
4000
8000
64000
13“ reel
1 / 7
S-E309
Rev.1.0,13-Mar-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com