YJQ45G06A
100
15
13
11
9
10
VGS=4.5V
VGS=10V
150℃
25℃
1
7
Tj=25℃
0.1
5
0.3
0.5
0.7
0.9
1.1
0
10
20
30
40
50
Vsd- Source to Drain Voltage (V)
ID-Drain Current (A)
Figure 7. RDS(on) VS Drain Current
Figure 8. Forward characteristics of reverse diode
1.1
1.4
ID=250uA
ID=250uA
1.2
1
1.05
1
0.8
0.6
0.4
0.2
0.95
0.9
-75
-25
25
75
125
175
-75
-25
25
75
125
175
Tj-Junction Temperature (℃)
Tj-Junction Temperature (℃)
Figure 9. Normalized breakdown voltage
Figure 10. Normalized Threshold voltage
60
40
20
0
50
40
30
20
10
0
-50.00
0.00
50.00
100.00
150.00
-50
0
50
100
150
Tc-Ambient Temperature (℃)
Tc-Case Temperature (℃)
Figure 11. Current dissipation
Figure 12. Power dissipation
4 / 8
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-E289
Rev.1.0,2-Feb-23
www.21yangjie.com