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YJQ60N03A PDF预览

YJQ60N03A

更新时间: 2024-11-03 15:19:31
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
6页 437K
描述
DFN3333-8L

YJQ60N03A 数据手册

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RoHS  
COMPLIANT  
YJQ60N03A  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
● VDS  
30 V  
● ID  
60 A  
● RDS(ON)( at VGS=10V)  
● RDS(ON)( at VGS=4.5V)  
● 100% UIS Tested  
● 100% VDS Tested  
3.2 mohm  
4.0 mohm  
General Description  
● Trench Power LV MOSFET technology  
● Excellent package for heat dissipation  
● High density cell design for low RDS(ON)  
Applications  
● DC-DC Converters  
● Power management functions  
● Backlighting  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
30  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
±20  
60  
V
TC=25℃  
TC=100℃  
Drain Current  
ID  
A
38  
Pulsed Drain Current A  
IDM  
PD  
240  
75  
A
W
Total Power Dissipation @ TC=25B  
Total Power Dissipation @ TC=100B  
Total Power Dissipation @ TA=25C  
Single Pulse Avalanche Energy D  
PD  
30  
W
PD  
6.2  
W
EAS  
400  
1.67  
20  
mJ  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Ambient  
Junction and Storage Temperature Range  
RθJC  
RθJA  
TJ ,TSTG  
/ W  
/ W  
-55+150  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
PREFERED P/N  
Marking  
DELIVERY MODE  
CODE  
YJQ60N03A  
F1  
Q60N03A  
5000  
10000  
100000  
13“ reel  
1 / 6  
S-E661  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.3.2,18-Jun-21  

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