Datasheet > YJQ55P02A

YJQ55P02A

更新时间： 2024-03-03 10:10:59

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	784K
描述
DFN3333-8L

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数据手册

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YJQ55P02A 数据手册

RoHS

COMPLIANT

YJQ55P02A

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-20V

● I_D

-55A

● R_DS(ON)( at V_GS= -4.5V)

＜8.3mohm

● R_DS(ON)( at V_GS= -2.5V)

● R_DS(ON)( at V_GS= -1.8V)

● 100% EAS Tested

＜10.0mohm

＜15.0mohm

General Description

● Trench Power LV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 3

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● High current load applications

● Load switching

● Hard switched and high frequency Circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-20

±10

-55

Tc=25℃

Drain Current

I_D

Tc=100℃

-35

Pulsed Drain Current ^A

I_DM

-160

Single Pulse Avalanche Energy ^B

E_AS

Tc=25℃

Total Power Dissipation

P_D

Tc=100℃

R_θJC

R_θJA

3.3

Thermal Resistance Junction-to-Case ^C

Junction and Storage Temperature Range

℃/ W

T_J,T_STG

-55～+150

℃

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJQ55P02A

Q55P02A

5000

10000

100000

13“ reel

1 / 7

S-E644

Rev.3.2,20-Mar-21

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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