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YJQD30P02A PDF预览

YJQD30P02A

更新时间: 2024-11-03 15:19:43
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扬杰 - YANGJIE /
页数 文件大小 规格书
7页 703K
描述
DFN3333-8L

YJQD30P02A 数据手册

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RoHS  
COMPLIANT  
YJQD30P02A  
P-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
● VDS  
-20V  
● ID  
-30A  
● RDS(ON)( at VGS= -4.5V)  
● RDS(ON)( at VGS= -2.5V)  
● RDS(ON)( at VGS= -1.8V)  
19mohm  
22mohm  
30mohm  
General Description  
● Trench Power MV MOSFET technology  
High density cell design for Low RDS(ON)  
High Speed switching  
● Moisture Sensitivity Level 3  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
Battery protection  
Load switch  
Power management  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Maximum  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
-20  
VGS  
±10  
V
TC=25@ Steady State  
-30  
TC=100@ Steady State  
TA=25@ Steady State  
TA=100@ Steady State  
-19  
-10  
-6  
Drain Current  
ID  
A
Pulsed Drain Current A  
IDM  
-55  
31  
A
Single Pulse Avalanche Energy  
EAS  
mJ  
TC=25@ Steady State  
TC=100@ Steady State  
TA=25@ Steady State  
TA=100@ Steady State  
21  
8.4  
3
Total Power Dissipation B  
PD  
W
1.2  
Thermal Resistance Junction-to-Ambient @ Steady State C  
Thermal Resistance Junction-to-Case @ Steady State  
Junction and Storage Temperature Range  
RθJA  
42  
5.9  
/W  
/W  
RθJC  
TJ ,TSTG  
-55+150  
Ordering Information (Example)  
PACKING  
PREFERED P/N  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
Marking  
DELIVERY MODE  
CODE  
YJQD30P02A  
F1  
Q30P02  
5000  
10000  
100000  
13reel  
1 / 7  
S-E643  
Rev.3.2,16-Nov-22  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com