RoHS
COMPLIANT
YJQD30P02A
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-20V
● ID
-30A
● RDS(ON)( at VGS= -4.5V)
● RDS(ON)( at VGS= -2.5V)
● RDS(ON)( at VGS= -1.8V)
<19mohm
<22mohm
<30mohm
General Description
● Trench Power MV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
● Moisture Sensitivity Level 3
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Battery protection
● Load switch
● Power management
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Maximum
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
-20
VGS
±10
V
TC=25℃ @ Steady State
-30
TC=100℃ @ Steady State
TA=25℃ @ Steady State
TA=100℃ @ Steady State
-19
-10
-6
Drain Current
ID
A
Pulsed Drain Current A
IDM
-55
31
A
Single Pulse Avalanche Energy
EAS
mJ
TC=25℃ @ Steady State
TC=100℃ @ Steady State
TA=25℃ @ Steady State
TA=100℃ @ Steady State
21
8.4
3
Total Power Dissipation B
PD
W
1.2
Thermal Resistance Junction-to-Ambient @ Steady State C
Thermal Resistance Junction-to-Case @ Steady State
Junction and Storage Temperature Range
RθJA
42
5.9
℃/W
℃/W
℃
RθJC
TJ ,TSTG
-55~+150
Ordering Information (Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJQD30P02A
F1
Q30P02
5000
10000
100000
13“ reel
1 / 7
S-E643
Rev.3.2,16-Nov-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com